note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0089a doc solid state devices, inc. 14830 valley view blvd * la mirada, c a 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet to - 3 sft6650/3 10 amp / 8 0 volts 50 mhz pnp power darlington bipolar transistor features: low s aturation v oltage hermetically sealed, isolated package direct r eplacement for 2n6650 tx, txv, s - level s creening a vailable, e quivalen t to mil - prf - 19500/527 maximum ratings symbol value units collector ? emitter voltage v ceo 80 volts collector ? base voltage v cbo 80 volts emitter ? base voltage v ebo 5 volts continuous collector current i c 10 amps maximum base current i b 0. 25 amps power dissipation @ t a = 25oc @ t c = 25oc p d1 p d2 5 85 w operating & storage temperature top & tstg - 65 to +175 oc maximum thermal resistance junction to case r q jc 1.76 oc/w to - 3 1.197 1.177 ? .875 max 2x .043 .038 .675 .655 .525 max .135 max .440 .420 2x .225 .205 .450 .250 2x .312 min 2x ? .165 .151 2x r.188 max 1 seating plane 2 1 1 notes: this dimension shall be measured at points .050 - .055" below the seating plane. when gage is not used, measurement will be made at seating plane. this outline does not meet the minimum criteria established by js-10 for registration.
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0089a doc solid state devices, inc. 14830 valley view blvd * la mirada, c a 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sft6650/3 electrical characteristics 4 / symbol min typ max units collector to emitter sustaining voltage i c = 200ma bv ceo 80 ?? ?? v collector ? emitter breakdown voltage i c = 200 ma; r bb = 100 w bv cer 80 ?? ?? volts collector base cutoff curr ent v cb = 80 v i cbo ?? ?? 1.0 ma collector emitter cutoff current v ce = 80 v i ceo ?? 0.001 1.0 ma collector emitter cutoff current v ce = 80 v, v be = 1.5 v i cex ?? ?? 0.3 ma emitter base cutoff current v eb = 5.0 v i ebo ?? 0. 00 1 10 ma dc forward current t ransfer ratio * v ce = 3v, i c = 1 a v ce = 3v, i c = 5 a v ce = 3v, i c = 10 a h fe1 h fe2 h fe3 300 1000 100 7,000 9,000 1500 ?? 20,000 ?? collector to emitter saturation voltage i c = 5 a, i b = 10 ma i c = 10 a, i b = 100 ma v ce(sat)1 v ce(sat)2 ?? ?? 1.4 2.2 2.0 3.0 v base to emitter voltage i c = 5 a, v ce = 3v i c = 10 a, v ce = 3v v be(on)1 v be(on)2 ?? ?? 2.0 2.8 2.8 4.5 v frequency transition (small signal current gain) @ f= 1 mhz v ce =5v, i c = 1 a, f= 1 mhz h fe 50 350 400 output capacitance v cb = 10v, f = 1 mhz c obo ?? 100 300 pf switching characteristics v cc = 30v, i c = 5 a, i b1 =i b2 = 20 ma t on t off ?? 0.5 2.0 2.5 10 m s safe operating area t c = 25oc, 1 cycle, 1 sec v ce = 8.5v, i c = 10 a v ce = 25v, i c = 3.4 a v ce = 80v, i c = 0.14 a soa1 soa2 soa3 notes: * pulse test: pulse width = 300 m sec, duty cycle = 2%. 1 / for ordering information, price, and availability contact factory. 2 / screening per mil - prf - 19500. 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25 o c. available part numb ers: consult factory pin assignment package collector emitter base to - 3 case pin 2 pin 1
|
